丝印：3401；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：832.47 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：3401；Package：SOT-23；Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：3401；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：803.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：3401；Package：SOT-23L；P-Channel Enhancement Mode MOSFET

Features Surface Mount Package Lead Free Product is Acquired High Power and Current Handing Capability Applications Load Switch PWM Applications Power Management

文件：3.6207 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：3401；Package：SOT23-3L；P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：813.7 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：3401；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

文件：277.81 Kbytes 页数：3 Pages

ADV

爱德微

丝印：3401；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.6707 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

丝印：3401；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.6707 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

丝印：3401；Package：SOT-23；SE P-Channel Enhancement Mode Power MOSFET

文件：1.11491 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3401；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

文件：576.85 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子