丝印：NCE3065G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectificatio

文件：669.33 Kbytes 页数：7 Pages

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丝印：NCE3065K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =65A RDS(ON)

文件：617.25 Kbytes 页数：7 Pages

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丝印：NCE3065Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

文件：727.88 Kbytes 页数：7 Pages

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丝印：NCE3068Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3068Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =30V,ID =6

文件：838.4 Kbytes 页数：7 Pages

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丝印：NCE3080IA；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON)

文件：288.89 Kbytes 页数：7 Pages

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丝印：NCE3085K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3085K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =85A RDS(ON) =4.2 mΩ @ VGS=10V (Typ) RDS(ON) =7.0mΩ @ VGS=4.5V (Typ) ● High density cel

文件：679.64 Kbytes 页数：7 Pages

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丝印：NCE3090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

文件：620.18 Kbytes 页数：7 Pages

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丝印：NCE3095G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

文件：411.09 Kbytes 页数：7 Pages

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丝印：NCE3095K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3095K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =95A RDS(ON)

文件：647.62 Kbytes 页数：7 Pages

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丝印：NCE30H10BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：642.07 Kbytes 页数：7 Pages

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