丝印：NCE30H10BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：642.07 Kbytes 页数：7 Pages

NCEPOWER

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12-200V N-Channel Trench MOSFET

NCEPower

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON)

文件：685.84 Kbytes 页数：7 Pages

NCEPOWER

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N-Channel 30 V (D-S) MOSFET

文件：1.12063 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

NCE N-Channel Enhancement Mode Power MOSFET

文件：338.86 Kbytes 页数：7 Pages

NCEPOWER

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