NCE3090K芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE3090K	文件：620.18 Kbytes Page：7 Pages	丝印：NCE3090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density 文件：620.18 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE3090K	文件：620.18 Kbytes Page：7 Pages	丝印：NCE3090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density 文件：620.18 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE3090K	文件：1.00247 Mbytes Page：7 Pages	N-Channel 30-V (D-S) MOSFET 文件：1.00247 Mbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI

更多NCE3090K供应商更新时间2025-9-16 18:30:00