丝印：3008Y；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON)

文件：313.36 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

文件：2.33569 Mbytes 页数：21 Pages

NEXPERIA

安世

30 / 30 V 400 / 220 mA N/P-channel Trench MOSFET

文件：1.48763 Mbytes 页数：21 Pages

PHI

PHI

30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET

1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench

文件：310.2 Kbytes 页数：20 Pages

NEXPERIA

安世