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NCE30P06J

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

MSD30P06

P-Channel60-V(D-S)MOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MTB30P06

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉

MTB30P06KFP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06V

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉

MTB30P06V

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTBV30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP30P06

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

MTP30P06V

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

MTP30P06V

P?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP30P06V

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP30P06VG

P?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFG30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SF30P06C

GlassPassivatedSuperFastRecoveryRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

供应商型号品牌批号封装库存备注价格
NCE新洁能
22+
DFN2X2-6L
36000
代理渠道力挺长期原装现货 可开增票
询价
NCE/新洁能
DNF2*26
7906200
询价
NCE新洁能
21+
DFN2X2-6L
25000
进口原装!长期供应!绝对优势价格(诚信经营
询价
NCE/新洁能
22+
DFN2X2-6L
25800
原装正品,品质保证,值得你信赖.
询价
NCE/新洁能
23+
DFN2X2-6L
50000
全新原装正品现货,支持订货
询价
NCE/新洁能
2022
DFN2X2-6L
80000
原装现货,OEM渠道,欢迎咨询
询价
NCE/新洁能
21+
DNF2*26
13880
公司只售原装,支持实单
询价
NCE/新洁能
22+
24000
询价拨打15919799957全天在线
询价
NCE/新洁能
2021+
DFN2X2-6L
1000
13632880263
询价
NCE/新洁能
21+
DNF2*26
19600
一站式BOM配单
询价
更多NCE30P06J供应商 更新时间2024-4-30 13:36:00