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IRLD014	文件：172.88 Kbytes Page：6 Pages	POWERMOSFEET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti	IRF International Rectifier	IRF
IRLD014	文件：1.72964 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLD014	文件：845.54 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLD014PBF	文件：1.76807 Mbytes Page：8 Pages	HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti	IRF International Rectifier	IRF
IRLD014PBF	文件：1.72964 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLD014PBF	文件：845.54 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：209.85 Kbytes Page：8 Pages	HEXFET짰PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRLL014	文件：959.24 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：174.34 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：174.34 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：170.07 Kbytes Page：8 Pages	PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：358.68 Kbytes Page：8 Pages	PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRLL014	文件：1.03976 Mbytes Page：8 Pages	55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧	EVVOSEMI
IRLL014N	文件：158.5 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014N	文件：165.67 Kbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014N	文件：1.03976 Mbytes Page：8 Pages	55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧	EVVOSEMI
IRLL014NPBF	文件：261.26 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014NPBF	文件：262.4 Kbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRLL014NTR	文件：165.67 Kbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014NTRPBF	文件：1.80269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRL014N	IR	22+	TO-263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRL014N	IR	23+	TO-263	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRL014N	IR	23+	TO-263	7000		询价
艾睿国际（香港）有限公司	IRL014PBF	IR	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IRL02200X200X1	TDK	20+	射频元件	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市近平电子有限公司	IRL03A3002000.5	TDK	6000	面议	19	N/A	询价
深圳市永贝尔科技有限公司	IRL10	EVERLIGHT	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳市勤思达科技有限公司	IRL1004	IR	15+	TO-220	11560	全新原装,现货库存,长期供应	询价
深圳市星佑电子有限公司	IRL1004	ir	06+	TO-220	15000	原装	询价
深圳市恒创达实业有限公司	IRL1004	IR	17+	TO-220	6200		询价

更多IRL014N供应商更新时间2024-9-25 14:00:00

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