HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：124.56 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.026Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.31 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

Infineon

英飞凌

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：344.25 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026廓 , ID = 55A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.54583 Mbytes 页数：9 Pages

IRF

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：344.25 Kbytes 页数：10 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.29 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：689.54 Kbytes 页数：11 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：300.69 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件：981.62 Kbytes 页数：7 Pages

VBSEMI

微碧半导体