丝印：IRLR3410；Package：TO-252；N-Channel MOSFET

文件：261.839 Kbytes 页数：7 Pages

KEXIN

科信电子

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：388.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel MOSFET Transistor

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件：158.62 Kbytes 页数：10 Pages

IRF

采用 D-Pak 封装的 100V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：468.78 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：388.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET짰 Power MOSFET

文件：290.17 Kbytes 页数：11 Pages

IRF

Logic Level Gate Drive

文件：291.13 Kbytes 页数：11 Pages

IRF

Logic Level Gate Drive

文件：291.13 Kbytes 页数：11 Pages

IRF