Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：262.4 Kbytes 页数：9 Pages

IRF

N-Channel 60-V (D-S) MOSFET

文件：1.80269 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：LL014N；Package：SOT223；‘N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package.

文件：1.82994 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

HEXFET Power MOSFET

文件：214.35 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

文件：959.24 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：174.34 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司