丝印：LL014N；Package：SOT-223；55V N-Channel MOSFET

Benefits VDS (V) =55V ID =2.0A (VGS = 10V) RDS(ON)

文件：1.03976 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：LL014N；Package：SOT223；‘N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package.

文件：1.82994 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.08828 Mbytes 页数：8 Pages

VBSEMI

微碧半导体