丝印：LL014N；Package：SOT223；‘N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package.

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DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

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