丝印：LL024N；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rosin = 85m @Vos = 10V. Rosin = 100m2 @Vgs = 45V. High dense cel design for extremely low Rosin. Rugged and relabi. Lead free products acquired. SOT-223 package.

文件：1.83204 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：990.32 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

HEXFET Power MOSFET

文件：114.5 Kbytes 页数：8 Pages

IRF