Advanced Process Technology

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IRF

N-Channel 60-V (D-S) MOSFET

文件：964.25 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

StrongIRFET ™功率 MOSFET 55 V，采用 SOT-223 封装

\n优势:\n• Wide availability from distribution partners\n• Industry standard qualification level\n• Standard pinout allows for drop in replacement\n• High performance in low frequency applications;

Infineon

英飞凌

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

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IRF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：1.38953 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.2042 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司