首页 >IRLML6344TRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRLML6344TRPBF | HEXFETPower MOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | |
IRLML6344TRPBF | HEXFETPower MOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRLML6344TRPBF | N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
BasicElectronicTestLeadKit | POMONA Pomona Electronics | POMONA | ||
NandP-ChannelEnhancementModeMOSFET | ACE ACE Technology Co., LTD. | ACE | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
VTRCYLINDERSERVOCONTROLCIRCUIT | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
HELPCDMAAWS/KPCSCDMAPowerAmplifierModule PRODUCTDESCRIPTION TheAWC6344isaHELPTMproductforCDMAdevicesoperatinginAWS/KPCSband.ThisPAincorporatesANADIGICS’HELPTMtechnologytodeliverexceptionalefficiencyatlowpowerlevelsandlowquiescentcurrentwithouttheneedforexternalvoltageregulatorsorconverters.Thede | ANADIGICS ANADIGICS | ANADIGICS | ||
BipolarTransistor(-)30V,(-)1.5A,LowVCE(sat),(PNP)NPNSingleCPH3 Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.9mm) •Highallowablepowerdissipation •Halogenfreecompliance Applic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
CircularBeamLowOperatingCurrent | OPNEXTOpnext. Inc. Opnext. Inc. | OPNEXT | ||
Load/SystemSwitch Features VDS(V)=30V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
IRLML6344 Features VDS(V)=30V RDS(ON)29m(VGS=4.5V) RDS(ON)37m(VGS=2.5V) Application(s) Load/SystemSwitch | UMWUMW 友台友台半导体 | UMW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Industry-standardSOT-23Package | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Load/SystemSwitch Features VDS(V)=30V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
6-PinμPResetCircuitwithPower-FailComparator GeneralDescription TheMAX6342–MAX6345familyofmicroprocessor(µP)supervisorycircuitsmonitorspowersuppliesindigitalsystems.ThesedevicessignificantlyimprovesystemreliabilityandaccuracycomparedtoseparateICsordiscretecomponents. Features ♦Small6-PinSOT23Package ♦Pre | MaximMaximIntegrated 美信半导体 | Maxim | ||
6-PinuPResetCircuitwithPower-FailComparator | MaximMaximIntegrated 美信半导体 | Maxim |
详细参数
- 型号：
IRLML6344TRPBF
- 功能描述：
MOSFET MOSFT 5.0A 29mOhm 20V 2.5V drv capable
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
20+ |
SOT-23 |
2990 |
老谢保证原装正品 |
询价 | ||
IR |
22+ |
SOT-23 |
14000 |
只做原装假一罚十，原装现货联系徐先生16737229490 |
询价 | ||
IR |
23+ |
SOT-23 |
45000 |
热卖优势现货 |
询价 | ||
INFINEON |
22+ |
?SOT-23 |
213000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
IR |
16+ |
SOT-23 |
18500 |
进口原装现货/价格优势! |
询价 | ||
IR |
18+ |
SOT-23 |
86000 |
一级代理/全新现货/长期供应! |
询价 | ||
INFINEON/英飞凌 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
INFINEON |
21+ |
SOT-23 |
10080 |
原装,诚信经营 |
询价 | ||
INFINEON |
2339+ |
SOT-23 |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 |
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