丝印：A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

文件：3.79248 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：A19T；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

General Features ® Vos =-30Vlo = 424 Rosin

文件：2.60787 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：A19T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter

文件：770.25 Kbytes 页数：2 Pages

UMW

友台半导体

丝印：A19T；Package：SOT-23；GENERAL FEATURES

文件：374.38 Kbytes 页数：4 Pages

FS

丝印：a19t；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

文件：805.27 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：A19T；Package：SOT-23；Plastic-Encapsulate MOSFETS

文件：458.14 Kbytes 页数：3 Pages

SHENZHENSLS

三联盛

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter

文件：770.25 Kbytes 页数：2 Pages

UMW

友台半导体

P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 页数：8 Pages

RECTRON

丽正国际

P-Channel Enhancement Mode Power MOSFET

文件：805.27 Kbytes 页数：8 Pages

RECTRON

丽正国际