| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMP2123LQ GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyIRLML6402 GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS Features TrenchFETPowerMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. ThePMV48XPAusesadvancedtrenchtechnology GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
Marking：A1SHB；Package：SOT-23；MOSFET FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description TheSQ2301ESusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；P-Channel MOSFET FEATURES TrenchFETPowerMOSFET | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
Marking：A1SHB；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
Marking：A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
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