丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94327 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89655 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features TrenchFET Power MOSFET

文件：1.46628 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The PMV48XPA uses advanced trench technology General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94325 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：883.22 Kbytes 页数：3 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：A1SHB；Package：SOT-23；MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：575.18 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The SQ2301ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89649 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；P-Channel MOSFET

FEATURES TrenchFET Power MOSFET

文件：462.77 Kbytes 页数：2 Pages

YFWDIODE

佑风微电子

丝印：A1SHB；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

文件：840.4 Kbytes 页数：5 Pages

ADV

爱德微

丝印：A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology

文件：1.52056 Mbytes 页数：4 Pages

DOINGTER

杜因特