DMP2123LQ

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowRDS(ON) -72mΩ@VGS=-4.5V -108mΩ@VGS=-2.7V -123mΩ@VGS=-2.5V •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliabil

DMP2123LQ

Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMP2123LQ GeneralFeatures VDS=-20VID =-2.3A RDS(ON)

DMP2123LQ-13

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowRDS(ON) -72mΩ@VGS=-4.5V -108mΩ@VGS=-2.7V -123mΩ@VGS=-2.5V •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliabil

DMP2123LQ-7

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowRDS(ON) -72mΩ@VGS=-4.5V -108mΩ@VGS=-2.7V -123mΩ@VGS=-2.5V •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliabil

E2123S

3C207/28BCFLEXOASFLEXSound,Alarm&SecurityCable

ECQB2123MF

PlasticFilmCapacitors

ECQE2123

MetallizedPolyesterFilmCapacitor

ECQE2123

PlasticFilmCapacitors

MetallizedPolyesterFilmCapacitor Non-inductiveconstructionusingmetallizedPolyesterfilmwithflameretardantepoxyresincoating ■Features •Self-healingproperty •Excellentelectricalcharacteristics •Flameretardantepoxyresincoating •RoHSdirectivecompliant ■RecommendedAp

ECQE2123

MetallizedPolyesterFilmCapacitor

MetallizedPolyesterFilmCapacitor Non-inductiveconstructionusingmetallizedPolyesterfilmwithflameretardantepoxyresincoating ■Features •Self-healingproperty •Excellentelectricalcharacteristics •Flameretardantepoxyresincoating •RoHSdirectivecompliant ■RecommendedAp

ECQE2123

MetallizedPolyesterFilmCapacitor