P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

文件：494.48 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94327 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

文件：494.48 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

文件：494.48 Kbytes 页数：5 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance\nLow Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage;

Diodes

美台半导体