丝印：A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology

文件：1.52056 Mbytes 页数：4 Pages

DOINGTER

杜因特

MOSFET

DOINGTER

杜因特

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

文件：22.14 Kbytes 页数：2 Pages

NTE