丝印：2305；Package：SOT-23；P-Channel MOSFET uses advanced trench technology

文件：2.05186 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：2305S；Package：SOT-23-3；P-Channel MOSFET uses advanced trench technology

文件：1.21567 Mbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET

DOINGTER

杜因特

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes 页数：14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes 页数：14 Pages

NSC

国半

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE