Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE

Complementary Transistors

Description:\nThe NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.Features:\n• High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V\n• High D

NTE

SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER, POWER GOOD & ENABLES

文件：579.39 Kbytes 页数：19 Pages

MICROSEMI

美高森美

SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER, POWER GOOD & ENABLES

文件：579.39 Kbytes 页数：19 Pages

MICROSEMI

美高森美

SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER, POWER GOOD & ENABLES

文件：579.39 Kbytes 页数：19 Pages

MICROSEMI

美高森美