Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

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NTE

Complementary Transistors

NTE

Dual High-Efficiency PWM Step-Down DC-DC Coverter

General Description The PAM2306 is a dual step-down current-mode, DC-DC converter. At heavy load, the constant-frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2306 provides a power-saving PulseSkipping

文件：407.08 Kbytes 页数：15 Pages

PAM

龙鼎微

DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER

文件：570.33 Kbytes 页数：15 Pages

DIODES

美台半导体

DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER

Features - Efficiency up to 96 - Only 40μA (Typ. Per Channel) Quiescent Current - Output Current: Up to 1A per Channel - Internal Synchronous Rectifier - 1.5MHz Switching Frequency - Soft Start - Under-Voltage Lockout - Short Circuit Protection - Moisture Sensitivity: Level 1 per J-STD-02

文件：861.19 Kbytes 页数：15 Pages

DIODES

美台半导体