Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

文件：24.89 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Color TV Horizontal Deflection Output

Features: • High Speed • High Collector–Emitter Breakdown Voltage • High Reliability • On–Chip Damper Diode

文件：23.49 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs

Features: • High Voltage: VCBO = 1500V • Low Saturation Voltage: VCE(sat) = 3V Max • High Speed: tf = 0.1µs Typ

文件：24.41 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection Output High Speed Switch

Features: • High Breakdown Voltage • High Reliability • High Speed Switching • Wide Area of Safe Operation (ASO)

文件：23.59 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount)

Features: • Low Noise Figure, High Gain • NF = 1.1dB, |S21e|² = 13dB (f = 1GHz)

文件：22.07 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount

Features: • Low Current • Low Voltage Applications: • General Purpose Switching and Amplification

文件：57.86 Kbytes 页数：2 Pages

NTE

NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington

NTE2649 (NPN) NTE2650 (PNP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

文件：61.44 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors General Purpose Amp

文件：60.82 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors General Purpose Amp

文件：60.82 Kbytes 页数：2 Pages

NTE

Bi-Polar transistor Selector Guide

NTE