Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits

文件：30.79 Kbytes 页数：4 Pages

NTE

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Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description:\nThe NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. Al

NTE

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