NTE2708中文资料Integrated Circuit NMOS, 8K UV EPROM, 450ns数据手册NTE规格书
NTE2708规格书详情
描述 Description
Description:
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or program changes are required. This device is designed for operation from 0° to +70°C and is supplied in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.Features:
• 1024 X 8 Organization
• All Inputs and Outputs Fully TTL Compatible
• Static Operation (No Clocks, No Refresh)
• Performance Ranges:
Max Access: 450ns
Min Cycle: 450ns
• 3–State Outputs for OR–Ties
• 8–Bit Output
• Plug–Compatible Pin–Outs Allowing Interchangeability
技术参数
- 型号：
NTE2708
- 制造商：
NTE Electronics
- 功能描述：
IC, EPROM, 8KBIT, 450NS, DIP-24; Memory
- Type：
EPROM - OTP; Memory
- Size：
8Kbit; Memory
- Configuration：
8K x 8; Supply Voltage
- Min：
4.75V; Supply Voltage
- Max：
5.25V; Memory Case
- Style：
DIP; No. of
- Pins：
24; Access
- Time：
450ns; Voltage
- Rating：
5V
- 功能描述：
EPROM UV 8K-Bit 1K x 8 450ns 24-Pin PDIP
