NTE269数据手册NTE中文资料规格书
NTE269规格书详情
描述 Description
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
Features:
Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A
TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
技术参数
- 型号：
NTE269
- 制造商：
NTE Electronics
- 功能描述：
BIPOLAR TRANSISTOR PNP -50V
- 功能描述：
T-PNP- DARL 50 V- HFE1000
- 功能描述：
BIPOLAR TRANSISTOR, PNP, -50V; Transistor
- Polarity：
PNP; Collector Emitter Voltage
- V(br)ceo：
-50V; Power Dissipation
- Pd：
40W; DC Collector
- Current：
4A; DC Current Gain
- hFE：
2000; Operating Temperature
- Min：
-55C; No. of
- Pins：
3
- 功能描述：
Trans Darlington PNP 50V 2A 3-Pin(3+Tab) TO-202
