型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
NTE269 | Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s 文件:21.3 Kbytes 页数:2 Pages | NTE | NTE | |
NTE269 | Complementary Transistors Description:\nThe NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications such | NTE | NTE | |
GAALAS PLASTIC INFRARED EMITTING DIODES Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an 文件:84.63 Kbytes 页数:2 Pages | Optek | Optek | ||
GaAIAs Plastic Infrared Emitting Diodes Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an 文件:281.68 Kbytes 页数:2 Pages | Optek | Optek | ||
Plastic Infrared Emitting Diode Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an 文件:278.99 Kbytes 页数:6 Pages | Optek | Optek |
详细参数
- 型号:
NTE269
- 制造商:
NTE Electronics
- 功能描述:
BIPOLAR TRANSISTOR PNP -50V
- 功能描述:
T-PNP- DARL 50 V- HFE1000
- 功能描述:
BIPOLAR TRANSISTOR, PNP, -50V; Transistor
- Polarity:
PNP; Collector Emitter Voltage
- V(br)ceo:
-50V; Power Dissipation
- Pd:
40W; DC Collector
- Current:
4A; DC Current Gain
- hFE:
2000; Operating Temperature
- Min:
-55C; No. of
- Pins:
3
- 功能描述:
Trans Darlington PNP 50V 2A 3-Pin(3+Tab) TO-202
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
NTE |
23+ |
39310 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NTE |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
NTE |
23+ |
65480 |
询价 |
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