Silicon Complementary Transistors Audio Amplifier and Driver

Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage

文件：20.87 Kbytes 页数：2 Pages

NTE

Complementary Transistors

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V

文件：24.12 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.144Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

文件：24.12 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

文件：24.12 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

文件：24.11 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.254Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

文件：24.14 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

文件：24.11 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.308Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

文件：24.1 Kbytes 页数：3 Pages

NTE

N-Channel Selector Guide

NTE