MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

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NTE

N-Channel Selector Guide

NTE

2 Watt S-Band GaN Driver Amplifier

Key Features • Frequency Range: 2.7 – 3.5 GHz • PSAT : 33 dBm (PIN = 15 dBm) • PAE: > 52 % (PIN = 15 dBm) • Small Signal Gain: 28.4 dB • Bias: VD = 25 V, IDQ = 29 mA • Package Dimensions: 4.00 x 4.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specifi

文件：986.95 Kbytes 页数：24 Pages

QORVO

威讯联合

2 Watt S-Band GaN Driver Amplifier

Key Features • Frequency Range: 2.7 – 3.5 GHz • PSAT : 33 dBm (PIN = 15 dBm) • PAE: > 52 % (PIN = 15 dBm) • Small Signal Gain: 28.4 dB • Bias: VD = 25 V, IDQ = 29 mA • Package Dimensions: 4.00 x 4.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specifi

文件：986.95 Kbytes 页数：24 Pages

QORVO

威讯联合

Crystal Unit SMD 1.6x1.2 24MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless communications devices, especially for a n

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TAI-SAW

嘉硕科技