NTE2935

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.638ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=500V

QPA2935

2WattS-BandGaNDriverAmplifier

KeyFeatures •FrequencyRange:2.7–3.5GHz •PSAT:33dBm(PIN=15dBm) •PAE:>52%(PIN=15dBm) •SmallSignalGain:28.4dB •Bias:VD=25V,IDQ=29mA •PackageDimensions:4.00x4.00x0.85mm Performanceistypicalacrossfrequency.Please referenceelectricalspecifi

QPA2935EVB

2WattS-BandGaNDriverAmplifier

KeyFeatures •FrequencyRange:2.7–3.5GHz •PSAT:33dBm(PIN=15dBm) •PAE:>52%(PIN=15dBm) •SmallSignalGain:28.4dB •Bias:VD=25V,IDQ=29mA •PackageDimensions:4.00x4.00x0.85mm Performanceistypicalacrossfrequency.Please referenceelectricalspecifi

TZ2935B

CrystalUnitSMD1.6x1.224MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

UDN-2935

1.5ADARLINGTONSWITCHES

UDN-2935

BIPOLARHALF-BRIDGEMOTORDRIVERS

BIPOLARHALF-BRIDGEMOTORDRIVER

UDN-2935Z

BIPOLARHALF-BRIDGEMOTORDRIVERS

BIPOLARHALF-BRIDGEMOTORDRIVER

ZBA2935

blackcapmarked-forcircularpushbutton횠22