MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance

文件：24.71 Kbytes 页数：3 Pages

NTE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • Including two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1967~RN1969

文件：278.01 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

文件：190.99 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more

文件：360.32 Kbytes 页数：6 Pages

TOSHIBA

东芝