MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

文件：24.11 Kbytes 页数：3 Pages

NTE

N-Channel Selector Guide

NTE

Atomic MAP Sensor

文件：2.2066 Mbytes 页数：4 Pages

MALLORY

2.9 – 3.3 GHz 60 W GaN Power Amplifier

Key Features • Frequency Range: 2.9 – 3.3 GHz • PSAT (PIN= 27 dBm): 48.8 dBm • PAE (PIN= 27 dBm): 62 % • Power Gain (PIN= 27 dBm): 21.8 dB • Bias: VD = 28 V, IDQ = 680 mA • Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical spe

文件：833.41 Kbytes 页数：20 Pages

QORVO

威讯联合

2.9 – 3.3 GHz 60 W GaN Power Amplifier

Key Features • Frequency Range: 2.9 – 3.3 GHz • PSAT (PIN= 27 dBm): 48.8 dBm • PAE (PIN= 27 dBm): 62 % • Power Gain (PIN= 27 dBm): 21.8 dB • Bias: VD = 28 V, IDQ = 680 mA • Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical spe

文件：833.41 Kbytes 页数：20 Pages

QORVO

威讯联合