MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V

文件：24.12 Kbytes 页数：3 Pages

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文件：409.02 Kbytes 页数：16 Pages

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文件：345.86 Kbytes 页数：13 Pages

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100ppm/째C, 50關A in SOT23-3 CMOS VOLTAGE REFERENCE

文件：581.15 Kbytes 页数：15 Pages

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德州仪器