MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

文件：24.12 Kbytes 页数：3 Pages

NTE

N-Channel Selector Guide

NTE

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

文件：122.99 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HIGH-PERFORMANCE PHASE-LOCKED LOOP

文件：418.24 Kbytes 页数：24 Pages

TI

德州仪器

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

文件：122.99 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体