NTE27

Germanium PNP Transistor High Current, High Gain Amp

Description: TheNTE27isaPNPgermaniumpowertransistordesignedforhighcurrentapplicationsrequiringhigh–gainandlowsaturationvoltages.

NTE270

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: •HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V •Collec

NTE2708

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: TheNTE2708isanultra–violetlight–erasable,electricallyprogrammablereadonlymemory.Ithas8,192bitsorganizedas1024wordsof8–bitlength.ThisdeviceisfabricatedusingN–channelsilicon–gatetechnologyforhighspeedandsimpleinterfacewithMOSandbipolarcircuits

NTE271

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: •HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V •Collec

NTE2716

Integrated Circuit NMOS, 16K UV Erasable PROM

Description: TheNTE2716isa16,384–bit(2048x8–bit)ErasableandElectricallyReprogrammablePROMina24–LeadDIPtypepackagedesignedforsystemdebugusageandsimilarapplicationsrequiringnonvolatilememorythatcouldbereprogrammedperiodically.Thetransparentlidonthepackagea

NTE272

Silicon Darlington Complementary Power Amplifiers

Description: TheNTE272(NPN)andNTE273(PNP)aresiliconcomplementaryPowerAmplifiersinaTO202typecasedesignedforuseincomplementaryamplifiersanddriverapplications. Features: •HighDCCurrentGain: hFE=25,000(Min)@IC=200mA =15,000(Min)@IC

NTE273

Silicon Darlington Complementary Power Amplifiers

Description: TheNTE272(NPN)andNTE273(PNP)aresiliconcomplementaryPowerAmplifiersinaTO202typecasedesignedforuseincomplementaryamplifiersanddriverapplications. Features: •HighDCCurrentGain: hFE=25,000(Min)@IC=200mA =15,000(Min)@IC

NTE2732A

Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM

Description: TheNTE2732Aisa32,768–bitsultravioleterasableandelectricallyprogrammableread–onlymemory(EPROM)organizedas4,096wordsby8bitsandmanufacturedusingN–ChannelSi–GateMOSprocessing.Withitssingle+5Vpowersupplyandwithanaccesstimeof200ns,theNTE2732Aisi

NTE274

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: TheNTE274(NPN)andNTE275(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO66typecasedesignedforgeneralpurposeamplifier,low–frequencyswitchingandhammerdriverapplications. Features: •HighDCCurrentGain:hFE=3000Typ@IC=2A •LowCollect

NTE275

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: TheNTE274(NPN)andNTE275(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO66typecasedesignedforgeneralpurposeamplifier,low–frequencyswitchingandhammerdriverapplications. Features: •HighDCCurrentGain:hFE=3000Typ@IC=2A •LowCollect