Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

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NTE

Complementary Transistors

NTE

Integrated Circuit NMOS, 16K UV Erasable PROM

Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package a

文件：34.4 Kbytes 页数：5 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

Integrated Circuit NMOS, 16K UV Erasable PROM

Description:\nThe NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allow

NTE