Silicon Complementary Transistors High Power, High Current Switch

Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: ● High Current Capability: IC = 50A (Continuous) ● DC Current Gain: hFE= 15 to 60 @ IC = 25A ●

文件：24.21 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

文件：23.02 Kbytes 页数：2 Pages

NTE

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements

文件：29.28 Kbytes 页数：3 Pages

NTE

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltag

文件：55.16 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

文件：21.45 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide

文件：24.12 Kbytes 页数：2 Pages

NTE

N−Ch, Enhancement Mode High Speed Switch

Features: * Advanced Process Technology * Dynamic dv/dt Rating * +175C Operating Temperature * Fast Switching * Fully Avalanche Rated * Ease of Paralleling

文件：80.14 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide

文件：24.12 Kbytes 页数：2 Pages

NTE

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: Dynamic dv/dt Rating Isolated Central Mounting Hole Fast Switching +175°C Operating Temperature Ease of Paralleling Simple Drive Requirements

文件：29.5 Kbytes 页数：3 Pages

NTE

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements

文件：29.47 Kbytes 页数：3 Pages

NTE