NTE29规格书行情报价NTENTE第2页-114ic电子网

首页 >NTE29>规格书列表

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NTE2922	文件：29.44 Kbytes Page：3 Pages	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements	NTE NTE Electronics	NTE
NTE2923	文件：29.46 Kbytes Page：3 Pages	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements	NTE NTE Electronics	NTE
NTE2924	文件：29.45 Kbytes Page：3 Pages	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements	NTE NTE Electronics	NTE
NTE293	文件：20.87 Kbytes Page：2 Pages	Silicon Complementary Transistors Audio Amplifier and Driver Description: TheNTE293(NPN)andNTE294(PNP)aresiliconcomplementarytransistorsinaGiantTO92typepackagedesignedforuseinlow–frequencypoweramplificationanddriveapplications. Features: ●LowCollector–EmitterSaturationVoltage	NTE NTE Electronics	NTE
NTE2930	文件：24.12 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •LowerRDS(on):0.032ΩTyp •LowerLeakageCurrent:10µA(Max)@VDS=100V	NTE NTE Electronics	NTE
NTE2931	文件：24.12 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.144ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=200V	NTE NTE Electronics	NTE
NTE2932	文件：24.12 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.071ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=200V	NTE NTE Electronics	NTE
NTE2933	文件：24.11 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.437ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=400V	NTE NTE Electronics	NTE
NTE2934	文件：24.14 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.254ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=400V	NTE NTE Electronics	NTE
NTE2935	文件：24.11 Kbytes Page：3 Pages	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.638ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=500V	NTE NTE Electronics	NTE

<<<123 4 5 6 7 >>>

详细参数

型号：
NTE29
制造商：
NTE Electronics
功能描述：
T-NPN-SI-HIGH POWER AMP
功能描述：
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3

供应商	型号	品牌	批号	封装	库存	备注	价格
现代芯城（深圳）科技有限公司	NTE29		24+	N/A	58000	一级代理-主营优势-实惠价格-不悔选择	询价
上海金庆电子技术有限公司	NTE2970		新		5	全新原装货期两周	询价
深圳市赛尔通科技有限公司	NTE291	NTE	23+		65480		询价
上海市鑫鸿达电子	NTE2970		2022+		1	全新原装货期两周	询价
贸泽芯城（深圳）电子科技有限公司	NTE2998	NTE	23+		39330	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市东来宝电子科技有限公司	NTE291	NTE	24+	TO-252	9200	郑重承诺只做原装进口现货	询价

更多NTE29供应商更新时间2025-7-22 11:06:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号