Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

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NTE

Complementary Transistors

Description:\nThe NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.Features:\n• High DC Current Gain:\n   hFE = 2500 Typ (NTE263)\n         = 3500 Typ (NTE264)\n• C

NTE

Integrated Circuit Quad Differential Line Driver

Functional Description: The NTE2631 is a quad differential line driver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed for digital data transmission over balanced lines. This device meets all the requirements of EIA standard RS–422 and federal sta

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NTE

Integrated Circuit Quad Differential Line Receiver

Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed to meet the requirements of RS–422 and RS–423, and federal standards 1020 and 1030 for balanced and unbalanced digital data transmission. T

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NTE

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

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NTE

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

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NTE

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to

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NTE

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Features: • High Breakdown Voltage: VCES = 1500V • Built–In Damper Diode • Isolated TO3PFM Type Package Applications: • TV/Character Display Horizontal Deflection Output

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NTE

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching

Features: • High Breakdown Voltage Capability • Fully Insulated Package for Easy Mounting • Low Saturation Voltage • High Switching Speed Applications: • Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors • Switching Power Supply for TV

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NTE

Silicon NPN Transistor Darlington

Features: • High Voltage, High Forward and Clamped Reverse Energy • 10A Peak Collector Current • 80W at +25°C Case Temperature • Collector–Emitter Sustaining Voltage: 400V Min at 7A

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NTE