丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89655 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

P-Channel Enhancement MOSFET

Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(

文件：1.96158 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：1E；Package：SOT-23；P-Channel Enhancement MOSFET

■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(

文件：3.71404 Mbytes 页数：7 Pages

UMW

友台半导体

Plastic-Encapsulate Mosfets

文件：442.33 Kbytes 页数：4 Pages

HOTTECH

合科泰

P-Channel Enhancement MOSFET

文件：2.22079 Mbytes 页数：6 Pages

KEXIN

科信电子

bq2026 Evaluation Software

文件：249.57 Kbytes 页数：12 Pages

TI

德州仪器

丝印：1E**；Package：SOT-23；HEXFET Power MOSFET

文件：140.68 Kbytes 页数：9 Pages

IRF

丝印：1E**；Package：SOT-23；HEXFET Power MOSFET

文件：81.91 Kbytes 页数：8 Pages

IRF

场效应管

HXY MOSFET

华轩阳电子

中低压MOS

GOODWORK

固得沃克电子