Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：2.16738 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR014, SiHLR014) • Straight lead (IRLU014, SiHLU014) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

文件：822.02 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件：180.89 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：2.24711 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：2.24711 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRLR014, SiHLR014)\nStraight lead (IRLU014, SiHLU014);

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR014, SiHLR014) • Straight lead (IRLU014, SiHLU014) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

文件：822.02 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：110.86 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：281.42 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

文件：1.12217 Mbytes 页数：10 Pages

IRF