HEXFET Power MOSFET

VDSS= 55V RDS(on)= 0.027Ω ID= 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

文件：310.73 Kbytes 页数：10 Pages

IRF

Logic-Level Gate Drive

文件：319.87 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

文件：319.87 Kbytes 页数：11 Pages

IRF

60V N-Channel Enhancement Mode Power MOSFET

General Description The UMW IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.24193 Mbytes 页数：6 Pages

UMW

友台半导体

60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

文件：1.17618 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

Advanced Process Technology

文件：319.87 Kbytes 页数：11 Pages

IRF