丝印：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The UMW IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.24193 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

文件：1.17618 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

Advanced Process Technology

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N-Channel 6 0-V (D-S) MOSFET

文件：988.52 Kbytes 页数：6 Pages

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Advanced Process Technology

文件：319.87 Kbytes 页数：11 Pages

IRF