丝印：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The UMW IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.24193 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

文件：1.17618 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：989.82 Kbytes 页数：7 Pages

VBSEMI

微碧半导体