Ultra-Low Gate Impedance

文件：353.15 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

文件：367.35 Kbytes 页数：11 Pages

IRF

HEXFET

Power MOSFET

文件：353.15 Kbytes 页数：11 Pages

IRF

Ultra-Low Gate Impedance

文件：353.15 Kbytes 页数：11 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件：237.75 Kbytes 页数：10 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件：237.75 Kbytes 页数：10 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount power package\n• Capable of being wave-soldered\n \n  ;

Infineon

英飞凌