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IRLR3105PBF

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件:308.56 Kbytes 页数:11 Pages

IRF

IRLR3105PBF

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件:327.71 Kbytes 页数:11 Pages

IRF

IRLR3105PBF

Advanced Process Technology

文件:327.71 Kbytes 页数:11 Pages

IRF

IRLR3105PBF_15

Advanced Process Technology

文件:327.71 Kbytes 页数:11 Pages

IRF

详细参数

  • 型号:

    IRLR3105PBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
DPAK
5000
全现原装公司现货
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
25+
D-PAK
90000
一级代理商进口原装现货、价格合理
询价
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
24+
TO-252
65200
一级代理/放心采购
询价
IR
25+
TO-252
110
优势
询价
INFINEON
25+
TO-252
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
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更多IRLR3105PBF供应商 更新时间2026-1-29 10:20:00