HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：304.82 Kbytes 页数：10 Pages

IRF

N-Channel 60 V (D-S) MOSFET

文件：995.79 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon planar type

文件：49.05 Kbytes 页数：4 Pages

PANASONIC

松下

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

文件：11.83 Kbytes 页数：1 Pages

SANKEN

三垦

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

文件：110.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体