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IRLL110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •Dynamicdv/dtRating •RepetitiveAvalanche

IRF

International Rectifier

IRLL110

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness.TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110

100V N-Channel MOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance •VDS(V)=100V •RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRLL110_V01

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110PBF

HEXFET짰 Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating RepetitiveAvalan

IRF

International Rectifier

IRLL110PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness.TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness.TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110TR

Marking:IRLL110;Package:SOT-223;100V N-Channel MOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance •VDS(V)=100V •RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRLL110TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness.TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110TRPBF

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    IRLL110

  • 功能描述:

    MOSFET N-Chan 100V 1.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2404+
SOT-223
3300
现货正品原装,假一赔十
询价
IR
24+
SOT-223
20000
只做原厂渠道 可追溯货源
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
23+
SOT223
35890
询价
IR
25+
SOT-223
3500
福安瓯为您提供真芯库存,真诚服务
询价
IOR
05/06+
SOT223
560
全新原装100真实现货供应
询价
IR
1415+
SOT-223
28500
全新原装正品,优势热卖
询价
IOR
24+
SOT223
1690
询价
IR
24+
原厂封装
8461
原装现货假一罚十
询价
IR
23+
SOT-223
5000
原装正品,假一罚十
询价
更多IRLL110供应商 更新时间2025-7-25 9:14:00