Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：IRLL110；Package：SOT-223；100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

文件：694.08 Kbytes 页数：8 Pages

UMW

友台半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

文件：930.08 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：358.68 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：358.68 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司