Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

文件：1.72964 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

POWER MOSFEET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertiable case style which can be stacked in multi

文件：172.88 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：845.54 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

POWER MOSFEET

Infineon

英飞凌

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertiable case style which can be stacked in multi

文件：1.76807 Mbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

文件：1.72964 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：845.54 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：845.54 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

MOS(场效应管)

Vishay

威世